BSO220N03MDGXUMA1 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ BSO220N03MDGXUMA1

The pictures are for reference only

Brand:

Infineon

Model:

BSO220N03MDGXUMA1

Description:

MOSFET 2N-CH 30V 6A 8DSO

Stock:

21942

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.19

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

10nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

800pF @ 15V

On resistance (maximum) for different Ids and Vgs

22 mΩ @ 7.7A,10V

Power - maximum

1.4W

Vgs (th) (maximum) for different Ids

2.1V @ 250µA

packing

TR,CT

series

OptiMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载BSO220N03MDGXUMA1.pdf

BSO220N03MDGXUMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21942,Price reference "real-time change" China/Hongkong。 BSO220N03MDGXUMA1 package/specs, Download BSO220N03MDGXUMA1、Datasheet。